int ret = 0;
/* Start address must align on block boundary */
- if (ofs & ((1 << chip->phys_erase_shift) - 1)) {
+ if (ofs & ((1ULL << chip->phys_erase_shift) - 1)) {
pr_debug("%s: unaligned address\n", __func__);
ret = -EINVAL;
}
/* Length must align on block boundary */
- if (len & ((1 << chip->phys_erase_shift) - 1)) {
+ if (len & ((1ULL << chip->phys_erase_shift) - 1)) {
pr_debug("%s: length not block aligned\n", __func__);
ret = -EINVAL;
}
*/
static void nand_write_buf(struct mtd_info *mtd, const uint8_t *buf, int len)
{
- int i;
struct nand_chip *chip = mtd->priv;
- for (i = 0; i < len; i++)
- writeb(buf[i], chip->IO_ADDR_W);
+ iowrite8_rep(chip->IO_ADDR_W, buf, len);
}
/**
*/
static void nand_read_buf(struct mtd_info *mtd, uint8_t *buf, int len)
{
- int i;
struct nand_chip *chip = mtd->priv;
- for (i = 0; i < len; i++)
- buf[i] = readb(chip->IO_ADDR_R);
+ ioread8_rep(chip->IO_ADDR_R, buf, len);
}
/**
*/
static void nand_write_buf16(struct mtd_info *mtd, const uint8_t *buf, int len)
{
- int i;
struct nand_chip *chip = mtd->priv;
u16 *p = (u16 *) buf;
- len >>= 1;
-
- for (i = 0; i < len; i++)
- writew(p[i], chip->IO_ADDR_W);
+ iowrite16_rep(chip->IO_ADDR_W, p, len >> 1);
}
/**
*/
static void nand_read_buf16(struct mtd_info *mtd, uint8_t *buf, int len)
{
- int i;
struct nand_chip *chip = mtd->priv;
u16 *p = (u16 *) buf;
- len >>= 1;
- for (i = 0; i < len; i++)
- p[i] = readw(chip->IO_ADDR_R);
+ ioread16_rep(chip->IO_ADDR_R, p, len >> 1);
}
/**
}
/**
- * nand_default_block_markbad - [DEFAULT] mark a block bad
+ * nand_default_block_markbad - [DEFAULT] mark a block bad via bad block marker
* @mtd: MTD device structure
* @ofs: offset from device start
*
* This is the default implementation, which can be overridden by a hardware
- * specific driver. We try operations in the following order, according to our
- * bbt_options (NAND_BBT_NO_OOB_BBM and NAND_BBT_USE_FLASH):
+ * specific driver. It provides the details for writing a bad block marker to a
+ * block.
+ */
+static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
+{
+ struct nand_chip *chip = mtd->priv;
+ struct mtd_oob_ops ops;
+ uint8_t buf[2] = { 0, 0 };
+ int ret = 0, res, i = 0;
+
+ ops.datbuf = NULL;
+ ops.oobbuf = buf;
+ ops.ooboffs = chip->badblockpos;
+ if (chip->options & NAND_BUSWIDTH_16) {
+ ops.ooboffs &= ~0x01;
+ ops.len = ops.ooblen = 2;
+ } else {
+ ops.len = ops.ooblen = 1;
+ }
+ ops.mode = MTD_OPS_PLACE_OOB;
+
+ /* Write to first/last page(s) if necessary */
+ if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
+ ofs += mtd->erasesize - mtd->writesize;
+ do {
+ res = nand_do_write_oob(mtd, ofs, &ops);
+ if (!ret)
+ ret = res;
+
+ i++;
+ ofs += mtd->writesize;
+ } while ((chip->bbt_options & NAND_BBT_SCAN2NDPAGE) && i < 2);
+
+ return ret;
+}
+
+/**
+ * nand_block_markbad_lowlevel - mark a block bad
+ * @mtd: MTD device structure
+ * @ofs: offset from device start
+ *
+ * This function performs the generic NAND bad block marking steps (i.e., bad
+ * block table(s) and/or marker(s)). We only allow the hardware driver to
+ * specify how to write bad block markers to OOB (chip->block_markbad).
+ *
+ * We try operations in the following order:
* (1) erase the affected block, to allow OOB marker to be written cleanly
- * (2) update in-memory BBT
- * (3) write bad block marker to OOB area of affected block
- * (4) update flash-based BBT
- * Note that we retain the first error encountered in (3) or (4), finish the
+ * (2) write bad block marker to OOB area of affected block (unless flag
+ * NAND_BBT_NO_OOB_BBM is present)
+ * (3) update the BBT
+ * Note that we retain the first error encountered in (2) or (3), finish the
* procedures, and dump the error in the end.
*/
-static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
+static int nand_block_markbad_lowlevel(struct mtd_info *mtd, loff_t ofs)
{
struct nand_chip *chip = mtd->priv;
- uint8_t buf[2] = { 0, 0 };
- int block, res, ret = 0, i = 0;
- int write_oob = !(chip->bbt_options & NAND_BBT_NO_OOB_BBM);
+ int res, ret = 0;
- if (write_oob) {
+ if (!(chip->bbt_options & NAND_BBT_NO_OOB_BBM)) {
struct erase_info einfo;
/* Attempt erase before marking OOB */
memset(&einfo, 0, sizeof(einfo));
einfo.mtd = mtd;
einfo.addr = ofs;
- einfo.len = 1 << chip->phys_erase_shift;
+ einfo.len = 1ULL << chip->phys_erase_shift;
nand_erase_nand(mtd, &einfo, 0);
- }
-
- /* Get block number */
- block = (int)(ofs >> chip->bbt_erase_shift);
- /* Mark block bad in memory-based BBT */
- if (chip->bbt)
- chip->bbt[block >> 2] |= 0x01 << ((block & 0x03) << 1);
-
- /* Write bad block marker to OOB */
- if (write_oob) {
- struct mtd_oob_ops ops;
- loff_t wr_ofs = ofs;
+ /* Write bad block marker to OOB */
nand_get_device(mtd, FL_WRITING);
-
- ops.datbuf = NULL;
- ops.oobbuf = buf;
- ops.ooboffs = chip->badblockpos;
- if (chip->options & NAND_BUSWIDTH_16) {
- ops.ooboffs &= ~0x01;
- ops.len = ops.ooblen = 2;
- } else {
- ops.len = ops.ooblen = 1;
- }
- ops.mode = MTD_OPS_PLACE_OOB;
-
- /* Write to first/last page(s) if necessary */
- if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
- wr_ofs += mtd->erasesize - mtd->writesize;
- do {
- res = nand_do_write_oob(mtd, wr_ofs, &ops);
- if (!ret)
- ret = res;
-
- i++;
- wr_ofs += mtd->writesize;
- } while ((chip->bbt_options & NAND_BBT_SCAN2NDPAGE) && i < 2);
-
+ ret = chip->block_markbad(mtd, ofs);
nand_release_device(mtd);
}
- /* Update flash-based bad block table */
- if (chip->bbt_options & NAND_BBT_USE_FLASH) {
- res = nand_update_bbt(mtd, ofs);
+ /* Mark block bad in BBT */
+ if (chip->bbt) {
+ res = nand_markbad_bbt(mtd, ofs);
if (!ret)
ret = res;
}
}
/* Increment page address and decrement length */
- len -= (1 << chip->phys_erase_shift);
+ len -= (1ULL << chip->phys_erase_shift);
page += pages_per_block;
/* Check, if we cross a chip boundary */
*/
static int nand_block_markbad(struct mtd_info *mtd, loff_t ofs)
{
- struct nand_chip *chip = mtd->priv;
int ret;
ret = nand_block_isbad(mtd, ofs);
return ret;
}
- return chip->block_markbad(mtd, ofs);
+ return nand_block_markbad_lowlevel(mtd, ofs);
}
/**
{
int status;
- if (!chip->onfi_version)
+ if (!chip->onfi_version ||
+ !(le16_to_cpu(chip->onfi_params.opt_cmd)
+ & ONFI_OPT_CMD_SET_GET_FEATURES))
return -EINVAL;
chip->cmdfunc(mtd, NAND_CMD_SET_FEATURES, addr, -1);
static int nand_onfi_get_features(struct mtd_info *mtd, struct nand_chip *chip,
int addr, uint8_t *subfeature_param)
{
- if (!chip->onfi_version)
+ if (!chip->onfi_version ||
+ !(le16_to_cpu(chip->onfi_params.opt_cmd)
+ & ONFI_OPT_CMD_SET_GET_FEATURES))
return -EINVAL;
/* clear the sub feature parameters */
if (!chip->select_chip)
chip->select_chip = nand_select_chip;
- if (!chip->read_byte)
+
+ /* If called twice, pointers that depend on busw may need to be reset */
+ if (!chip->read_byte || chip->read_byte == nand_read_byte)
chip->read_byte = busw ? nand_read_byte16 : nand_read_byte;
if (!chip->read_word)
chip->read_word = nand_read_word;
chip->block_bad = nand_block_bad;
if (!chip->block_markbad)
chip->block_markbad = nand_default_block_markbad;
- if (!chip->write_buf)
+ if (!chip->write_buf || chip->write_buf == nand_write_buf)
chip->write_buf = busw ? nand_write_buf16 : nand_write_buf;
- if (!chip->read_buf)
+ if (!chip->read_buf || chip->read_buf == nand_read_buf)
chip->read_buf = busw ? nand_read_buf16 : nand_read_buf;
if (!chip->scan_bbt)
chip->scan_bbt = nand_default_bbt;
return crc;
}
+/* Parse the Extended Parameter Page. */
+static int nand_flash_detect_ext_param_page(struct mtd_info *mtd,
+ struct nand_chip *chip, struct nand_onfi_params *p)
+{
+ struct onfi_ext_param_page *ep;
+ struct onfi_ext_section *s;
+ struct onfi_ext_ecc_info *ecc;
+ uint8_t *cursor;
+ int ret = -EINVAL;
+ int len;
+ int i;
+
+ len = le16_to_cpu(p->ext_param_page_length) * 16;
+ ep = kmalloc(len, GFP_KERNEL);
+ if (!ep) {
+ ret = -ENOMEM;
+ goto ext_out;
+ }
+
+ /* Send our own NAND_CMD_PARAM. */
+ chip->cmdfunc(mtd, NAND_CMD_PARAM, 0, -1);
+
+ /* Use the Change Read Column command to skip the ONFI param pages. */
+ chip->cmdfunc(mtd, NAND_CMD_RNDOUT,
+ sizeof(*p) * p->num_of_param_pages , -1);
+
+ /* Read out the Extended Parameter Page. */
+ chip->read_buf(mtd, (uint8_t *)ep, len);
+ if ((onfi_crc16(ONFI_CRC_BASE, ((uint8_t *)ep) + 2, len - 2)
+ != le16_to_cpu(ep->crc))) {
+ pr_debug("fail in the CRC.\n");
+ goto ext_out;
+ }
+
+ /*
+ * Check the signature.
+ * Do not strictly follow the ONFI spec, maybe changed in future.
+ */
+ if (strncmp(ep->sig, "EPPS", 4)) {
+ pr_debug("The signature is invalid.\n");
+ goto ext_out;
+ }
+
+ /* find the ECC section. */
+ cursor = (uint8_t *)(ep + 1);
+ for (i = 0; i < ONFI_EXT_SECTION_MAX; i++) {
+ s = ep->sections + i;
+ if (s->type == ONFI_SECTION_TYPE_2)
+ break;
+ cursor += s->length * 16;
+ }
+ if (i == ONFI_EXT_SECTION_MAX) {
+ pr_debug("We can not find the ECC section.\n");
+ goto ext_out;
+ }
+
+ /* get the info we want. */
+ ecc = (struct onfi_ext_ecc_info *)cursor;
+
+ if (ecc->codeword_size) {
+ chip->ecc_strength_ds = ecc->ecc_bits;
+ chip->ecc_step_ds = 1 << ecc->codeword_size;
+ }
+
+ pr_info("ONFI extended param page detected.\n");
+ return 0;
+
+ext_out:
+ kfree(ep);
+ return ret;
+}
+
/*
* Check if the NAND chip is ONFI compliant, returns 1 if it is, 0 otherwise.
*/
mtd->oobsize = le16_to_cpu(p->spare_bytes_per_page);
chip->chipsize = le32_to_cpu(p->blocks_per_lun);
chip->chipsize *= (uint64_t)mtd->erasesize * p->lun_count;
- *busw = 0;
- if (le16_to_cpu(p->features) & 1)
+
+ if (onfi_feature(chip) & ONFI_FEATURE_16_BIT_BUS)
*busw = NAND_BUSWIDTH_16;
+ else
+ *busw = 0;
+
+ if (p->ecc_bits != 0xff) {
+ chip->ecc_strength_ds = p->ecc_bits;
+ chip->ecc_step_ds = 512;
+ } else if (chip->onfi_version >= 21 &&
+ (onfi_feature(chip) & ONFI_FEATURE_EXT_PARAM_PAGE)) {
+
+ /*
+ * The nand_flash_detect_ext_param_page() uses the
+ * Change Read Column command which maybe not supported
+ * by the chip->cmdfunc. So try to update the chip->cmdfunc
+ * now. We do not replace user supplied command function.
+ */
+ if (mtd->writesize > 512 && chip->cmdfunc == nand_command)
+ chip->cmdfunc = nand_command_lp;
+
+ /* The Extended Parameter Page is supported since ONFI 2.1. */
+ if (nand_flash_detect_ext_param_page(mtd, chip, p))
+ pr_info("Failed to detect the extended param page.\n");
+ }
pr_info("ONFI flash detected\n");
return 1;
extid >>= 2;
/* Get buswidth information */
*busw = (extid & 0x01) ? NAND_BUSWIDTH_16 : 0;
+
+ /*
+ * Toshiba 24nm raw SLC (i.e., not BENAND) have 32B OOB per
+ * 512B page. For Toshiba SLC, we decode the 5th/6th byte as
+ * follows:
+ * - ID byte 6, bits[2:0]: 100b -> 43nm, 101b -> 32nm,
+ * 110b -> 24nm
+ * - ID byte 5, bit[7]: 1 -> BENAND, 0 -> raw SLC
+ */
+ if (id_len >= 6 && id_data[0] == NAND_MFR_TOSHIBA &&
+ !(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+ (id_data[5] & 0x7) == 0x6 /* 24nm */ &&
+ !(id_data[4] & 0x80) /* !BENAND */) {
+ mtd->oobsize = 32 * mtd->writesize >> 9;
+ }
+
}
}
chip->cellinfo = id_data[2];
chip->chipsize = (uint64_t)type->chipsize << 20;
chip->options |= type->options;
+ chip->ecc_strength_ds = NAND_ECC_STRENGTH(type);
+ chip->ecc_step_ds = NAND_ECC_STEP(type);
*busw = type->options & NAND_BUSWIDTH_16;
projects / karo-tx-linux.git / blobdiff