From: Rafał Miłecki Date: Mon, 24 Dec 2012 16:34:29 +0000 (+0100) Subject: mtd: bcm47xxnflash: increase NFLASH_READY_RETRIES X-Git-Url: https://git.karo-electronics.de/?a=commitdiff_plain;h=5a40b5fb2bb3a4d1c20149fe47ab25409026ee2e;p=linux-beck.git mtd: bcm47xxnflash: increase NFLASH_READY_RETRIES Recently imlemented writing support has shown that current num of retries is too low. Writing requires longer waiting than simple reading. Signed-off-by: Rafał Miłecki Signed-off-by: David Woodhouse --- diff --git a/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c b/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c index 86c9a79b89b3..595de4012e71 100644 --- a/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c +++ b/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c @@ -17,8 +17,8 @@ #include "bcm47xxnflash.h" /* Broadcom uses 1'000'000 but it seems to be too many. Tests on WNDR4500 has - * shown 164 retries as maxiumum. */ -#define NFLASH_READY_RETRIES 1000 + * shown ~1000 retries as maxiumum. */ +#define NFLASH_READY_RETRIES 10000 #define NFLASH_SECTOR_SIZE 512